Voltage relaxation and its influence on critical current measurements

被引：9
|
作者：
Ding, SY [1 ]
Luo, H
Zhang, YH
Ding, Q
Ling, FY
Zhang, P
Wu, XF
Qiu, L
Yao, XX
机构：
[1] Nanjing Univ, Dept Phys, Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China
来源：
JOURNAL OF SUPERCONDUCTIVITY | 2000年 / 13卷 / 03期
关键词：
V-t curve; I-c measurement; Ag-Bi2223; tapes;
D O I：
10.1023/A:1007715411727
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Based on the collective creep model, we numerically studied evolution of electric field and current density in superconductors and its influence on transport measurements of critical current. It is shown that many experimental facts, such as the dependence of V-I curves on sweeping rate of applied current and voltage relaxation are the results of this evolution. The simulation results are confirmed by electric transport measurements on Ag-sheathed Bi2-xPbxSr2Ca2Cu3Oy tapes. Discussions on influences of the voltage relaxation on electric transport measurements including superconducting critical current are made.
引用
收藏
页码：453 / 458
页数：6
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