On the Diffusion Limit of a Semiconductor Boltzmann-Poisson System Without Micro-Reversible Process

被引：7
|
作者：
Masmoudi, Nader [1 ]
Tayeb, Mohamed Lazhar [2 ]
机构：
[1] Courant Inst Math Sci, New York, NY 10012 USA
[2] El Manar Univ, Fac Sci Tunis, Tunis, Tunisia
来源：
COMMUNICATIONS IN PARTIAL DIFFERENTIAL EQUATIONS | 2010年 / 35卷 / 07期
关键词：
Boltzmann-Poisson; Detailed balance; Diffusion approximation; Entropy dissipation; Fermi-Dirac; Hybrid-Hilbert expansion; Semiconductor; HIGH-FIELD ASYMPTOTICS; APPROXIMATION; EQUATION; CONVERGENCE; TRANSPORT;
D O I：
10.1080/03605302.2010.483659
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
This paper deals with the diffusion approximation of a semiconductor Boltzmann-Poisson system. The statistics of collisions we are considering here, is the Fermi-Dirac operator with the Pauli exclusion term and without the detailed balance principle. Our study generalizes, the result of Goudon and Mellet [11], to the multi-dimensional case.
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页码：1163 / 1175
页数：13
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