Height control of self-assembled quantum dots by strain engineering during capping

被引：3
|
作者：
Grossi, D. F. [1 ]
Smereka, P. [2 ]
Keizer, J. G. [1 ,3 ]
Ulloa, J. M. [4 ]
Koenraad, P. M. [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] Univ Michigan, Dept Math, Ann Arbor, MI 48109 USA
[3] Univ New S Wales, Australian Res Council, Sch Phys, Ctr Excellence Quantum Computat & Commun, Sydney, NSW 2052, Australia
[4] Univ Politecn Madrid, Inst Syst Based Optoelect & Microtechnol ISOM, E-28040 Madrid, Spain
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 14期
基金：
美国国家科学基金会;
关键词：
GAAS; TRANSITION; SURFACE; INGAAS;
D O I：
10.1063/1.4897345
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strain engineering during the capping of III-V quantum dots has been explored as a means to control the height of strained self-assembled quantum dots. Results of Kinetic Monte Carlo simulations are confronted with cross-sectional Scanning Tunnel Microscopy (STM) measurements performed on InAs quantum dots grown by molecular beam epitaxy. We studied InAs quantum dots that are capped by InxGa(1- x) As layers of different indium compositions. Both from our realistic 3D kinetic Monte Carlo simulations and the X-STM measurements on real samples, a trend in the height of the capped quantum dot is found as a function of the lattice mismatch between the quantum dot material and the capping layer. Results obtained on additional material combinations show a generic role of the elastic energy in the control of the quantum dot morphology by strain engineering during capping. (C) 2014 AIP Publishing LLC.
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页数：4
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