Initial Stages of Ag Adsorption on Si(111)-7 x 7 Surface

被引：2
|
作者：
Lin, Xiu-Zhu [1 ]
Zhou, Yinghui [1 ]
Li, Jing [1 ,2 ]
Wu, Qi-Hui [3 ]
机构：
[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
[2] Xiamen Univ, Pen Tung Sah MEMS Res Ctr, Xiamen 361005, Peoples R China
[3] La Trobe Univ, Dept Phys, Bundoora, Vic 3086, Australia
来源：
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2010年 / 7卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Ag Adsorption; Si(111); First-Principles Calculations; ROOM-TEMPERATURE; AU ATOMS; DIFFUSION; STM; MOLECULES; DYNAMICS; ADATOM; GROWTH; PB;
D O I：
10.1166/jctn.2010.1400
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Initial stages of Ag atoms adsorption on Si(111)-7 x 7 surface were studied by first-principles calculations. The results showed that the most stable adsorption position for a single Ag atom is at S sites, which are almost in the middle between H-3 and B-2 high coordination sites. When two single Ag atoms are adsorbed on a Si half unit cell, they prefer to adsorb on the two closest S sites and form weak Ag-Ag bond.
引用
收藏
页码：600 / 603
页数：4
相关论文
共 50 条
  • [1] Initial stages of Mg adsorption on the Si(111)-7x7 surface
    Chen, Xiaohang
    Zhan, Huahan
    Zhou, Changjie
    Chen, Bo
    Kang, Junyong
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
  • [2] Initial stages of In adsorption on Si(111) 7x7
    Lin, XF
    Mai, HA
    Chizhov, I
    Willis, RF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02): : 995 - 999
  • [3] Initial stages of Sn adsorption on Si(111)-(7 x 7)
    Custance, O
    Brihuega, I
    Gómez-Rodríguez, JM
    Baró, AM
    [J]. SURFACE SCIENCE, 2001, 482 : 1406 - 1412
  • [4] Initial stages of the adsorption of Ge atoms on the Si(111)-(7x7) surface
    Zhao, Aidi
    Zhang, Xieqiu
    Chen, Gang
    Loy, M. M. T.
    Xiao, Xudong
    [J]. PHYSICAL REVIEW B, 2006, 74 (12)
  • [5] Initial stages of NH3 adsorption on Si(111) 7 x 7
    Ezzehar, H
    Sonnet, P
    Minot, C
    Stauffer, L
    [J]. SURFACE SCIENCE, 2000, 454 : 358 - 362
  • [6] Adsorption and diffusion of Ag atoms on Si(111)-(7 x 7) surface
    Jarolímek, T
    Myslivecek, J
    Sobotík, P
    Ost'ádal, I
    [J]. SURFACE SCIENCE, 2001, 482 : 386 - 390
  • [7] Initial stages of nanoislands formation on Si(111) 7x7 surface
    Vershinin, AV
    Teys, SA
    Shwartz, NL
    Yanovitskaja, ZS
    Zverev, AV
    [J]. EDM 2005: INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2005, : 27 - 29
  • [8] Adsorption of disilane on Si(111)-(7x7) and initial stages of CVD growth
    Braun, J
    Rauscher, H
    Behm, RJ
    [J]. SURFACE SCIENCE, 1998, 416 (1-2) : 226 - 239
  • [9] Initial stages of Au adsorption on the Si(111)-(7x7) surface studied by scanning tunneling microscopy
    Chizhov, I
    Lee, G
    Willis, RF
    [J]. PHYSICAL REVIEW B, 1997, 56 (19): : 12316 - 12320
  • [10] Initial adsorption of Ge on Si(111)-(7 x 7) surface at room temperature
    Yan, L
    Yang, HQ
    Gao, HJ
    Xie, SS
    Pang, SJ
    [J]. SURFACE SCIENCE, 2002, 498 (1-2) : 83 - 88
12345