Characterization of a prototype matrix of Silicon PhotoMultipliers

被引：4

作者：

Dinu, N. ^{[1
]}

Barrillon, P. ^{[1
]}

Bazin, C. ^{[1
]}

Belcari, N. ^{[2
,3
]}

Bisogni, M. G. ^{[2
,3
]}

Bondil-Blin, S. ^{[1
]}

Boscardin, M. ^{[4
]}

Chaumat, V. ^{[1
]}

Collazuol, G. ^{[3
,5
]}

De La Taille, C. ^{[1
]}

Del Guerra, A. ^{[2
,3
]}

Llosa, G. ^{[2
]}

Marcatili, S. ^{[2
,3
]}

Melchiorri, M. ^{[4
]}

Piemonte, C. ^{[4
]}

Puill, V. ^{[1
]}

Tarolli, A. ^{[4
]}

Vagnucci, J. F. ^{[1
]}

Zorzi, N. ^{[4
]}

机构：

[1] CNRS, IN2P3, LAL, F-91898 Orsay, France

[2] Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy

[3] Ist Nazl Fis Nucl, Sez Pisa, I-56127 Pisa, Italy

[4] IRST, FBK, I-38050 Trento, Italy

[5] Scuola Normale Super Pisa, I-56127 Pisa, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2009年 / 610卷 / 01期

关键词：

Photodetectors; Silicon PhotoMultiplier; Matrix; Gain; Dark count rate; Photon detection efficiency; IRST;

D O I：

10.1016/j.nima.2009.05.080

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This work reports on the electrical as well as the optical characterizations of a prototype matrix of Silicon PhotoMultipliers (SiPM). The electrical test consists of the measurement of the static (breakdown voltage, quenching resistance, post-breakdown dark current) as well as the dynamic characteristics (gain, dark count rate). The optical test consists of the estimation of the photon detection efficiency as a function of wavelength as well as operation voltage. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：101 / 104

页数：4

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