Synthesis and characterization of Bi doped ZnO thin films using SILAR method for ethanol sensor

被引：38
|
作者：
Zahirullah, S. Syed [1 ]
Immanuel, P. [2 ]
Pravinraj, S. [2 ]
Inbaraj, P. Fermi Hilbert [2 ]
Prince, J. Joseph [2 ]
机构：
[1] MIET Engn Coll, Dept Phys, Tiruchirappalli 620007, Tamil Nadu, India
[2] Anna Univ, Bharathidasan Inst Technol, Dept Phys, Tiruchirappalli 620024, Tamil Nadu, India
来源：
MATERIALS LETTERS | 2018年 / 230卷
关键词：
Thin films; Sensor; Ethanol; SILAR; Bi doped ZnO; ELECTRICAL-PROPERTIES; DEPOSITION; NANOSHEETS;
D O I：
10.1016/j.matlet.2018.07.067
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pure and Bi doped ZnO thin films prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The structural analysis shows that prepared films are polycrystalline in nature with preferential orientation along (1 0 0), (0 0 2) and (1 0 1) planes. Scanning electron microscope shows the morphological changes of the films with respect to increase in doping concentration. The average optical absorption value of all films was in the near visible range and the band gap of the films varies from 3.21 to 3.17 eV. The gas sensing study shows a maximum response of the films at 1000 ppm of ethanol was found to be around 60% with an operating temperature of 400 degrees C. (C) 2018 Published by Elsevier B.V.
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页码：1 / 4
页数：4
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