Thermoelectric and electrical properties of micro-quantity Sn-doped amorphous indium-zinc oxide thin films

被引：6

作者：

Byeon, Jayoung ^{[1
]}

Kim, Seohan ^{[1
]}

Lim, Jae-Hong ^{[2
]}

Song, Jae Yong ^{[3
]}

Park, Sun Hwa ^{[3
]}

Song, Pungkeun ^{[1
]}

机构：

[1] Pusan Natl Univ, Dept Mat Sci & Engn, Busan 609735, South Korea

[2] Korea Inst Mat Sci, Electrochem Dept, Chang Won 641010, South Korea

[3] Korea Res Inst Stand & Sci, Daejeon 305340, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 01期

关键词：

TEMPERATURE;

D O I：

10.7567/JJAP.56.010304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To realize high thermoelectric performance, it was tried to control both high electrical conductivity (sigma) and low thermal conductivity (K) for the Sn-doped indium-zinc oxide films prepared by DC magnetron sputtering. The highest power factor was obtained post-annealed at 200 degrees C due to the highest s. However, the highest figure of merit was obtained annealed at 500 degrees C. It could be attributed to both amorphous structure with low K by phonon and the highest Hall mobility. Thermoelectric and electrical properties of the film could be controlled by both heat treatment and Sn doping with high bond enthalpy. (C) 2017 The Japan Society of Applied Physics

引用

页数：3

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