Formation of high-density GaN self-assembled quantum dots by MOCVD

被引：6
|
作者：
Hoshino, K
Arakawa, Y
机构：
[1] Univ Tokyo, Inst Ind Sci, Nanoelect Collaborat Res Ctr, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538505, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期
关键词：
quantum clots; Stranski-Krastanow; metalorganic chemical vapor deposition; GaN;
D O I：
10.1016/j.jcrysgro.2004.08.130
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have successfully obtained GaN self-assembled quantum dots (QDs) with high density (>2 x 10(11) cm(-2)) by the Stranski-Krastanow growth mode in metalorganic chemical vapor deposition. The density of the QDs can be controlled between 10(8) and 10(11) cm(-2) by changing an amount of GaN nominally deposited. The photoluminescence peaks from both the QDs and the wetting layer are clearly observed even in uncapped QD structures at room temperature. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：161 / 166
页数：6
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