Photoluminescence study on twenty GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy

被引:4
|
作者
Tomita, N
Takekawa, K
Ohta, K
Shimomura, S
Hiyamizu, S
Fujita, K
Egami, N
Okamoto, Y
机构
[1] Osaka Univ, Fac Engn Sci, Osaka 5608531, Japan
[2] ATR Adapt Commun Res Labs, Kyoto 6190237, Japan
[3] KUBOTA Corp, Res Headquarters, Amagasaki, Hyogo 6610967, Japan
来源
关键词
D O I
10.1116/1.589866
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Twenty GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires (T-QWRs) on a (111)B facet were uniformly fabricated with a two-step growth of molecular beam epitaxy (MBE), which consists of a glancing-angle MBE of GaAs/Al0.3Ga0.7As multi-quantum well layer with 20 GaAs wells (a well width of L-w=6.1 nm) on reverse-mesa stripes on a (001) GaAs substrate and MBE overgrowth of a GaAs/Al0.3Ga0.7As single-quantum well with L-w=6.3 nm on a (111)B facet. Full width at half maximum of a photoluminescence peak (lambda=792 nm) from the tilted T-QWRs was as small as 8.7 meV at 28 K, which is comparable with those (6 meV,(5) 10 meV(10)) of conventional GaAs/Al0.3Ga0.7As T-QWRs (6.8 nm/5.8 nm, 7 nm/7 nm) fabricated by the cleaved-edge overgrowth. (C) 1998 American Vacuum Society. [S0734-211X(98)06202-7].
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页码:575 / 577
页数:3
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