Capacitance measurements on ZnO/CdS/Cu(In1-xGax)Se2 solar cells

被引：0
|
作者：
Wang, HP [1 ]
Shih, I [1 ]
Champness, CH [1 ]
机构：
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
来源：
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词：
D O I：
10.1109/PVSC.2002.1190675
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out on heterojunction ZnO/CdS/Cu(In1-xGax)Se-2 solar cells with different Ga content. These cells were fabricated on polished monocrystalline samples prepared by the Bridgman method. The C-V measurements indicated a significant effect of interface or surface states, especially for the non-annealed samples. Different hole deep levels and different shapes of DLTS spectrum were found in Cu(In1-xGax)Se-2 crystals with different Ga content. It is believed that Ga content has a great impact in the formation, of deep levels in Cu(In1-xGax)Se-2 crystals. The DLTS results combined with the conversion efficiencies of the solar cells indicate the interfacial states could dominate the cell performance rather than the deep levels in the semiconductor.
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收藏
页码：756 / 759
页数：4
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