Structure and magnetism of Fe-doped BaSnO3 thin films
被引:11
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作者:
Alaan, Urusa S.
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Alaan, Urusa S.
[1
,2
]
N'Diaye, Alpha T.
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Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
N'Diaye, Alpha T.
[3
]
Shafer, Padraic
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Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Shafer, Padraic
[3
]
Arenholz, Elke
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Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Arenholz, Elke
[3
]
Suzuki, Yuri
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Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USAStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
Suzuki, Yuri
[4
]
机构:
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
[3] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[4] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
BaSnO3 is an excellent candidate system for developing a new class of perovskite-based dilute magnetic semiconductors. In this study, we show that BaSn0.95Fe0.05O3 can be grown from a background pressure of similar to 2 x 10(-3) mTorr to oxygen pressures of 300 mTorr with high crystallinity and excellent structural quality. When grown in vacuum, the films may be weakly ferromagnetic with a nonzero x-ray magnetic circular dichroism signal on the Fe L-3 edge. Growth with oxygen flow appears to suppress magnetic ordering. Even for very thick films grown in 100 mTorr O-2, the films are paramagnetic. The existence of ferromagnetism in vacuum-grown BaSnO3 may be attributed to the F-center exchange mechanism, which relies on the presence of oxygen vacancies to facilitate the ferromagnetism. However, other possible extrinsic contributions to the magnetic ordering, such as clusters of Fe3O4 and FeO or contamination can also explain the observed behavior. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
机构:Indian Inst Technol, Low Temp Lab, Dept Phys, Madras 600036, Tamil Nadu, India
Balamurugan, K.
Kumar, N. Harish
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机构:Indian Inst Technol, Low Temp Lab, Dept Phys, Madras 600036, Tamil Nadu, India
Kumar, N. Harish
Chelvane, J. Arout
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Def Met Res Lab, Adv Magnet Grp, Hyderabad 500058, Andhra Pradesh, IndiaIndian Inst Technol, Low Temp Lab, Dept Phys, Madras 600036, Tamil Nadu, India
Chelvane, J. Arout
Santhosh, P. N.
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Indian Inst Technol, Low Temp Lab, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Low Temp Lab, Dept Phys, Madras 600036, Tamil Nadu, India
机构:
Seoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South KoreaSeoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South Korea
Kang, Jeonghun
Lee, Jeong Hyuk
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Seoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South KoreaSeoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South Korea
Lee, Jeong Hyuk
Lee, Han-Koo
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Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 37673, South KoreaSeoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South Korea
Lee, Han-Koo
Kim, Kwang-Tak
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Seoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South KoreaSeoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South Korea
Kim, Kwang-Tak
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Kim, Jin Hyeok
Maeng, Min-Jae
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Kyung Hee Univ, Dept Phys, Seoul 02447, South KoreaSeoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South Korea
Maeng, Min-Jae
Hong, Jong-Am
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Kyung Hee Univ, Dept Phys, Seoul 02447, South KoreaSeoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South Korea
Hong, Jong-Am
Park, Yongsup
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Kyung Hee Univ, Dept Phys, Seoul 02447, South Korea
Kyung Hee Univ, Dept Informat Display, Seoul 02447, South KoreaSeoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South Korea
Park, Yongsup
Kim, Kee Hoon
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Seoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South Korea
Seoul Natl Univ, Inst Appl Phys, Dept Phys & Astron, Seoul 08826, South KoreaSeoul Natl Univ, Dept Phys & Astron, Ctr Novel States Complex Mat Res, Seoul 08826, South Korea
机构:
Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
Balamurugan, K.
Kumar, E. Senthil
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Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
Kumar, E. Senthil
Ramachandran, B.
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Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
Ramachandran, B.
Venkatesh, S.
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机构:
Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, IndiaIndian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
Venkatesh, S.
Kumar, N. Harish
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Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
Kumar, N. Harish
Rao, M. S. Ramachandra
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Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
Rao, M. S. Ramachandra
Santhosh, P. N.
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Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, IndiaIndian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India
机构:
Tsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
Zeng, F.
Sheng, P.
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Tsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
Sheng, P.
Tang, G. S.
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Tsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
Tang, G. S.
Pan, F.
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Tsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
Pan, F.
Yan, W. S.
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Univ Sci & Technol China, Natl Synchrotron Radiat Lab NSRL, Hefei 230029, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
Yan, W. S.
Hu, F. C.
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Univ Sci & Technol China, Natl Synchrotron Radiat Lab NSRL, Hefei 230029, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
Hu, F. C.
Zou, Y.
论文数: 0引用数: 0
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机构:
Shanghai Synchrotron Radiat Facil BL14W1, Shanghai 201204, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
Zou, Y.
Huang, Y. Y.
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机构:
Shanghai Synchrotron Radiat Facil BL14W1, Shanghai 201204, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
Huang, Y. Y.
Jiang, Z.
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机构:
Shanghai Synchrotron Radiat Facil BL14W1, Shanghai 201204, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China
Jiang, Z.
Guo, D.
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机构:
Chinese Acad Sci, Inst Acoust, Beijing 100864, Peoples R ChinaTsinghua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China