Microstructural characterization of HgTe/HgCdTe superlattices

被引：6
|
作者：
Aoki, T
Takeguchi, M
Boieriu, P
Singh, R
Grein, C
Chang, Y
Sivananthan, S
Smith, DJ [1 ]
机构：
[1] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
[2] EPIR Technol, Bolingbrook, IL 60440 USA
[3] Univ Illinois, Dept Phys, Microphys Lab, Chicago, IL 60607 USA
[4] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 271卷 / 1-2期
基金：
美国国家航空航天局;
关键词：
characterization; diffusion; interface; molecular beam epitaxy; semiconducting mercury compounds; infrared device;
D O I：
10.1016/j.jcrysgro.2004.07.055
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The effects of annealing on the microstructure of HgTe/Hg0.05Cd0.95Te/CdZnTe(211) superlattices (SLs) grown by molecular beam epitaxy have been investigated by high-resolution electron microscopy, and Z-contrast imaging was utilized to study the chemical abruptness of the HgTe/HgCdTe interfaces. Low-temperature annealing at 225 or 250degreesC induced interdiffusion, leading to changes in the well/barrier widths. The SLs became more defective even after 30 min of annealing. The widths of the HgTe well layers increased and the widths of the HgCdTe barrier layers decreased dramatically. Thus, activation of p-type dopants such as arsenic through annealing will be difficult to achieve without degradation of electrical and optical properties. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：29 / 36
页数：8
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