Silicon nanostructures for photonics

被引:0
|
作者
Pavesi, L [1 ]
Bettotti, P [1 ]
Cazzanelli, M [1 ]
Cella, S [1 ]
Daldosso, N [1 ]
Dal Negro, L [1 ]
Danese, B [1 ]
Gaburro, Z [1 ]
Oton, CJ [1 ]
Pancheri, L [1 ]
Prakash, GV [1 ]
机构
[1] Univ Trent, INFM, I-38050 Povo, Trento, Italy
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanostructuring silicon is an effective way to turn silicon into a photonic material. In fact low dimensional silicon shows light amplification characteristics, non-linear optical effects, photon confinement in both one and two dimensions, photon trapping with evidences of light localization, and gas sensing properties.
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页码:103 / 112
页数:10
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