Recalescence after bulk solidification in germanium films melted by ns laser pulses

被引：3
|
作者：
Armengol, J
Vega, F
Chaoui, N
Solis, J
Afonso, CN
机构：
[1] Univ Politecn Cataluna, Dept Opt & Optometria, Terrassa 08222, Spain
[2] CSIC, Inst Opt, E-28006 Madrid, Spain
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 03期
关键词：
D O I：
10.1063/1.1534374
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Rapid solidification dynamics in amorphous germanium films melted by nanosecond laser pulses has been analyzed by means of single-shot subnanosecond time resolved reflectivity measurements using a streak camera based setup. The results show that once a minimum melt depth is induced, a bulk solidification process followed by the release of the solidification enthalpy dominates the solidification scenario. Moreover, the laser-melted material. solidifies completely before being remelted as a consequence of the solidification enthalpy release, something only observed, up to date, upon irradiation with picosecond laser pulses. (C) 2003 American Institute of Physics. [DOI: 10.1063/1.1534374].
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收藏
页码：1505 / 1510
页数：6
相关论文
共 17 条
  • [1] Recalescence after solidification in Ge films melted by picosecond laser pulses
    Siegel, J
    Solis, J
    Afonso, CN
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (08) : 1071 - 1073
  • [2] On the origin of recalescence in amorphous Ge films melted with nanosecond laser pulses
    Vega, F
    Afonso, CN
    Szyszko, W
    Solis, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2247 - 2250
  • [3] Bulk solidification and recalescence phenomena in amorphous Ge films upon picosecond pulsed laser irradiation
    Siegel, J
    Solis, J
    Afonso, CN
    Garcia, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) : 6677 - 6682
  • [4] LAMELLAR SOLIDIFICATION OF LASER MELTED CO-SI FILMS
    BOSCH, MA
    DAYEM, AH
    HARRISON, TR
    LEMONS, RA
    [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 363 - 364
  • [5] Solidification structures on carbon materials surface-melted by repetitive laser pulses
    Abramov, D. V.
    Arakelyan, S. M.
    Kutrovskaya, S. V.
    Kucherik, A. O.
    Prokoshev, V. G.
    [J]. QUANTUM ELECTRONICS, 2009, 39 (04) : 333 - 336
  • [6] Slow interfacial reamorphization of Ge films melted by ps laser pulses
    Siegel, J
    Solis, J
    Afonso, CN
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) : 5531 - 5537
  • [7] Generation, control and erasure of dual LIPSS in germanium with fs and ns laser pulses
    Casquero, Noemi
    Fuentes-Edfuf, Yasser
    Zazo, Raul
    Solis, Javier
    Siegel, Jan
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (48)
  • [8] Delayed melting at the substrate interface of amorphous Ge films partially melted with nanosecond laser pulses
    Vega, F
    Solis, J
    Siegel, J
    Afonso, CN
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6321 - 6326
  • [9] RELAXATION AND CRYSTALLIZATION KINETICS OF AMORPHOUS-GERMANIUM FILMS BY NANOSECOND LASER-PULSES
    VEGA, F
    SERNA, R
    AFONSO, CN
    BERMEJO, D
    TEJEDA, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7287 - 7291
  • [10] Laser-induced periodic surface structures on bismuth thin films with ns laser pulses below ablation threshold
    Reyes-Contreras, A.
    Camacho-Lopez, M.
    Camacho-Lopez, S.
    Olea-Mejia, O.
    Esparza-Garcia, A.
    Banuelos-Muneton, J. G.
    Camacho-Lopez, M. A.
    [J]. OPTICAL MATERIALS EXPRESS, 2017, 7 (06): : 1777 - 1786
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