Thermodynamic and transport properties of 2D GaAs systems near the apparent metal-insulator transition

被引：0

作者：

Galaktionov, E. A. ^{[1
]}

Allison, G. ^{[1
]}

Savchenko, A. K. ^{[1
]}

Safonov, S. S. ^{[1
]}

Fogler, M. M. ^{[2
]}

Simmons, M. Y. ^{[3
]}

Ritchie, D. A. ^{[3
]}

机构：

[1] Univ Exeter, Sch Phys, Stocker Rd, Exeter EX4 4QL, Devon, England

[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 OHE, England

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

compressibility; metal to insulator transition; percolations;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have performed combined studies of the charge compressibility and resistance of high-mobility 2D electron and hole systems in the region where d rho/dT changes its sign with decreasing carrier concentration - the apparent Metal-Insulator Transition. Despite the large difference in r(s), inverse compressibility in both electron and hole systems can be quantitatively explained by a nonlinear screening of disorder by the carriers. In addition, we have shown that the resistance exhibits a scaling characteristic of the percolation transition. The resistance percolation threshold, which agrees with the percolation point obtained from the analysis of the compressibility, is found to be at a lower concentration than the MIT.

引用

页码：591 / +

页数：2

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