Ternary universal logic gates using quantum dot gate field effect transistors

被引:4
|
作者
Karmakar, S. [1 ]
Jain, F. C. [2 ]
机构
[1] Intel Corp, Hillsboro, OR 97124 USA
[2] Univ Connecticut, Dept Elect & Comp Engn, Storrs, CT 06269 USA
关键词
Metal oxide semiconductor field effect transistor; Very Large Scale Integration; Quantum dots devices; Nanodots;
D O I
10.1007/s12648-014-0583-6
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this paper, we have discussed universal logic gates, NAND and NOR logic using the circuit model of three-state quantum dot gate field effect transistor. Quantum dot gate field effect transistors produce one intermediate state between the normal two stable, on and off states due to a change in the threshold voltage over this range. The authors have developed a simplified circuit model that accounts for this intermediate state. Interesting logic can be implemented using quantum dot gate field effect transistors. In this work, designs of various quantum dot gate field effect transistor based two-input ternary logic operations like NAND and NOR and their application in implementing other ternary logic circuits, have been discussed. Increased number of states in three state quantum dot gate field effect transistor increases the number of bit handling capability of this device and helps us to handle more bits at a time with less circuit elements.
引用
收藏
页码:1275 / 1283
页数:9
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