PVA:n-CdSe/CdS core/shell Nanorods as MIS Diode

被引：0
|
作者：
Sharma, Mamta [1 ,2 ]
Tripathi, S. K. [2 ]
机构：
[1] Panjab Univ, Dept Appl Phys, UIET, Chandigarh 160014, India
[2] Panjab Univ, Dept Phys, Ctr Adv Study Phys, Chandigarh 160014, India
来源：
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 | 2020年 / 2265卷
关键词：
SCHOTTKY-BARRIER DIODES; ELECTRICAL-PROPERTIES; SERIES RESISTANCE; TEMPERATURE-DEPENDENCE; V CHARACTERISTICS; INTERFACE STATES; C-V; SUBSTRATE; VOLTAGE; HEIGHTS;
D O I：
10.1063/5.0017718
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper present the analysis of forward and reverse bias I-V and C-V characteristics of Al/Al2O3/PVA:n-CdSe/CdS metal-insulator-semiconductor diode. PVA:n-CdSe/CdS nanocomposites has been prepared by Chemical Method. The temperature dependence I-V parameters such as the ideality factor (n), the barrier height (phi(b)), the Richardson constant (A*), mean barrier height have been studied. The temperature dependent C-V measurements of Al/Al2O3/PVA:n-CdSe/CdS diode has been performed in reverse bias mode. The discrepancy in barrier height obtained from both I-V and C-V measurements has been explained theoretically by using potential fluctuation model.
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页数：4
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