An analysis of deformation microstructure and subsequent recrystallisation in hot deformed aluminium alloy AA5052 using forward and reverse torsion

被引:3
|
作者
Lopez-Pedrosa, M. [1 ]
Wynne, B. P. [1 ]
Rainforth, W. M. [1 ]
机构
[1] Univ Sheffield, IMMPETUS, Mappin St, Sheffield S1 3JD, S Yorkshire, England
来源
FUNDAMENTALS OF DEFORMATION AND ANNEALING | 2007年 / 550卷
基金
英国工程与自然科学研究理事会;
关键词
strain path; microbands; recrystallisation; torsion; Al-Mg; AA5052; EBSD;
D O I
10.4028/www.scientific.net/MSF.550.223
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of strain path reversal on the microstructure in AA5052 have been studied using high resolution EBSD. Deformation was carried out using two equal steps of forward/forward (F/F) or forward/reverse (F/R) torsion at a temperature of 300 C and strain rate of 1s(-1) to a total strain of 0.5. In both cases the deformation microstructure in the majority of grains analysed consisted of microband arrays clustering at specific angles to the macroscopic deformation axes. For the F/F condition microbands clustered around -20 degrees and +45 degrees to the maximum principle stress direction, whilst for the F/R condition significantly more spread in microband angle was observed. This suggests that the microbands formed in the forward deformation have or are dissolving and any new microbands formed are related to the deformation conditions of the final strain path. This leads to the conclusion that instantaneous deformation mode determines the orientation of new microbands formed whilst a non-linear strain path history influences the range of misorientation angle in the material through the dissociation of previously formed microbands and the formation of new microbands at the new straining condition, leading to a lower level of misorientation angle. Analysis of material subjected to static annealing at 400 degrees C for 1hour appears to correspond with these observations as the F/F material was completely recrystallised with a fine grain structure whilst the F/R material had no major signs of recrystallisation.
引用
收藏
页码:223 / +
页数:2
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