Organic single-crystal field-effect transistors

被引:384
|
作者
Reese, Colin [1 ]
Bao, Zhenan [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
关键词
D O I
10.1016/S1369-7021(07)70016-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic molecular crystals hold great promise for the rational development of organic semiconductor materials. Their long-range order not only reveals the performance limits of organic materials, but also provides unique insight into their intrinsic transport properties. The field-effect transistor (FET) has served as a versatile tool for electrical characterization of many facets of their performance. In the last few years, breakthroughs in single-crystal FET fabrication techniques have enabled the realization of field-effect mobilities far surpassing amorphous Si, observation of the Hall effect in an organic material, and the study of transport as an explicit function of molecular packing and chemical structure.
引用
收藏
页码:20 / 27
页数:8
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