High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

被引：116
|
作者：
Cao, Y. [1 ]
Chu, R. [1 ]
Li, R. [1 ]
Chen, M. [1 ]
Chang, R. [1 ]
Hughes, B. [1 ]
机构：
[1] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 06期
关键词：
TRANSISTORS; TEMPLATE; ALGAN;
D O I：
10.1063/1.4941814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between <= 3 x 10(15) cm(-3) and 3 x 10(19) cm(-3). Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-mu m drift layer was fabricated. A low turn-on voltage of 0.77V with a breakdown voltage over 800V was obtained from the device. (C) 2016 AIP Publishing LLC.
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页数：5
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