Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBix Laser by Photo-Pumping

被引：81
|
作者：
Tominaga, Yoriko [1 ]
Oe, Kunishige [1 ]
Yoshimoto, Masahiro [1 ]
机构：
[1] Kyoto Inst Technol, Dept Elect, Sakyo Ku, Kyoto 6068585, Japan
来源：
APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 06期
基金：
日本学术振兴会;
关键词：
SEMICONDUCTOR ALLOY GAAS1-XBIX; MOLECULAR-BEAM EPITAXY; BAND-GAP;
D O I：
10.1143/APEX.3.062201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Lasing oscillation from a GaAs1-xBix/GaAs semiconductor chip with a Fabry-Perot cavity is acheived for the first time by photo-pumping. The GaAs0.975Bi0.025 active layer was grown at a very low temperature of 350 degrees C by molecular beam epitaxy. The characteristic temperature of the laser was 83 K between 150 and 240 K. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is only 40% of the temperature coefficient of the GaAs band gap in this temperature range. Above 240 K, the lasing threshold pumping power increased sharply, and the lasing emission peak energy started shifting to a shorter wavelength. (C) 2010 The Japan Society of Applied Physics
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页数：3
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