Ozone-Based Metal Oxide Atomic Layer Deposition: Impact of N2/O2 Supply Ratio in Ozone Generation

被引:15
|
作者
Delabie, Annelies [1 ]
Caymax, Matty [1 ]
Gielis, Sven [1 ]
Maes, Jan Willem [2 ]
Nyns, Laura [1 ]
Popovici, Mihaela [1 ]
Swerts, Johan [1 ]
Tielens, Hilde [1 ]
Peeters, Jozef [3 ]
Van Elshocht, Sven [1 ]
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] ASM Belgium, B-3001 Louvain, Belgium
[3] Univ Louvain, Dept Chem, B-3001 Louvain, Belgium
关键词
THIN-FILMS; DIELECTRIC LAYERS; SILENT DISCHARGE; GROWTH; O-3; IMPROVEMENT; NUCLEATION; PLASMA; SIO2; H2O;
D O I
10.1149/1.3355207
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The O-2/N-2 flow ratio during O-3 generation by dielectric barrier discharge has a large impact on the atomic layer deposition (ALD) of metal oxides in a hot wall ALD reactor. For HfO2 ALD using HfCl4 as a metal precursor, a higher growth per cycle and a broader ALD temperature window are obtained when N-2 is added to the O-2 supply of the O-3 generation. A positive impact of N-2 in the O-3 generation is also observed for ZrO2 and La2O3 ALD. A negative impact is observed for Al2O3 ALD: The Al2O3 thickness is reduced for those conditions for O-3 where HfO2 ALD is enhanced. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3355207] All rights reserved.
引用
收藏
页码:II176 / II178
页数:3
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