Zirconium oxide films: deposition techniques and their applications in dye-sensitized solar cells

被引:10
|
作者
Waghmare, M. A. [1 ,2 ]
Naushad, Mu. [3 ]
Alothman, Z. A. [3 ]
Ubale, A. U. [1 ]
Pathan, H. M. [2 ]
机构
[1] Govt Vidarbha Inst Sci & Humanities, Dept Phys, Nanostruct Thin Film Mat Lab, Amravati 444604, India
[2] Savitribai Phule Pune Univ, Dept Phys, Adv Phys Lab, Pune 411007, Maharashtra, India
[3] King Saud Univ, Coll Sci, Dept Chem, Adv Mat Res Chair, Bld 5, Riyadh 11451, Saudi Arabia
关键词
Zirconiumoxide films; Mesoporous films; Methods of synthesis; Conformal layer; Dye-sensitized solar cell; RESISTIVE SWITCHING PROPERTIES; ATOMIC LAYER DEPOSITION; TO-ELECTRON CONVERSION; HIGH-SURFACE-AREA; ZRO2; THIN-FILMS; LIGHT-SCATTERING; CHARGE RECOMBINATION; NANOPOROUS ELECTRODES; ENERGY-CONVERSION; GROWTH-KINETICS;
D O I
10.1007/s10008-017-3565-8
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Zirconium oxide (ZrO2) is acquiring considerable attention of most of the research groups and leading to a large number of publications due to its unique properties, especially in the context of emerging trends in the third generation of solar cell research. ZrO2 films offer magnificent aspects related to physicochemical properties, and the properties are found to be dependent on synthesis methods. In the present review, various deposition techniques used to grow zirconium oxide thin films and their application to enhance the quantum efficiency of titanium oxide (TiO2) based dye-sensitized solar cells (DSSCs) are discussed. Also, the modulated performances of DSSCs fabricated by growing the conformal ZrO2 insulating films to retard interfacial recombination dynamics on preformed TiO2 films are discussed.
引用
收藏
页码:2531 / 2545
页数:15
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