Physics and Applications of Emerging Ferroelectric Devices

Newly discovered ferroelectric HfO2 opens new pathways toward new logic transistor and low-power, high-speed, and high-density nonvolatile memories. In this paper, recent research progresses of ferroelectric-HfO2 devices are introduced: negative capacitance FET (NCFET) for energy-efficient logic transistor, nonvolatile SRAM (NVSRAM) for smart power management, ferroelectric FET (FeFET) with novel channel material for high-density memory, and ferroelectric tunnel junction (FTJ) for ultimately small memory device. Challenges and opportunities of each device technology are discussed.