Contactless electroreflectance investigation of energy levels in a 1.3 μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs/GaAs quantum wells

被引：8

作者：

Motyka, M.

Kudrawiec, R.

Sek, G.

Misiewicz, J.

Bisping, D.

Marquardt, B.

Forchel, A.

Fischer, M.

机构：

[1] Wroclaw Tech Univ, Inst Phys, PL-50370 Wroclaw, Poland

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

[3] Nanoplus Nanosyst & Technol GmbH, D-97218 Gerbrunn, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 22期

关键词：

D O I：

10.1063/1.2743382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser structures designed for the emission at 1.3 mu m and based on an active region containing InAsN quantum dots (QDs) embedded in GaInNAs/GaAs quantum wells (QWs) have been investigated by contactless electroreflectance. Optical transitions related to both the dots and the wells have been observed and the energies of the latter have been calculated using the effective mass approach. It has been shown that QW confines one electron, one light-hole, and three heavy-hole states only and the energy separation between the QD and QW ground state transitions is approximately 250 meV, which is ten times higher than the thermal energy at room temperature. (C) 2007 American Institute of Physics.

引用

页数：3

共 16 条

[1] Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells
Motyka, M.
Kudrawiec, R.
Sek, G.
Misiewicz, J.
Bisping, D.
Marquardt, B.
Forchel, A.
Fischer, M.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
[2] Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
Li, LH
Patriarche, G
Lemaitre, A
Largeau, L
Travers, L
Harmand, JC
JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 403 - 407
[3] Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm
Markus, A
Fiore, A
Ganière, JD
Oesterle, U
Chen, JX
Deveaud, B
Ilegems, M
Riechert, H
APPLIED PHYSICS LETTERS, 2002, 80 (06) : 911 - 913
[4] GaInNAs/GaAs multiple quantum-wells (MQWs) for 1.3μm laser applications
Illek, S
Borchert, B
Ebbinghaus, G
Egorov, AY
Riechert, H
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 537 - 540
[5] GaInNAs/GaAs multiple quantum-wells (MQWs) for 1.3 μm laser applications
Illek, S.
Borchert, B.
Ebbinghaus, G.
Egorov, A.Yu.
Riechert, H.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 537 - 540
[6] 1.3 μm VCSELs:: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots-three candidates as active material
Gilet, Ph.
Pougeoise, E.
Grenouillet, L.
Grosse, Ph.
Olivier, N.
Poncet, S.
Chelnokov, A.
Gerard, J. M.
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Hamelin, R.
Hammar, M.
Berggren, J.
Sundgren, P.
VERTICAL - CAVITY SURFACE - EMITTING LASERS XI, 2007, 6484
[7] Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5-1.65 μm: Broadening of the fundamental transition
Kudrawiec, R.
Poloczek, P.
Misiewicz, J.
Bae, H. P.
Sarmiento, T.
Bank, S. R.
Yuen, H. B.
Wistey, M. A.
Harris, James S., Jr.
APPLIED PHYSICS LETTERS, 2009, 94 (03)
[8] Optically-detected microwave resonance in InGaAsN/GaAs quantum wells and InAs/GaAs quantum dots emitting around 1.3 μm
Baranov, P. G.
Romanov, N. G.
Preobrazhenski, V. L.
Egorov, A. Yu.
Ustinov, V. M.
Sobolev, M. M.
INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 2, NO 6, 2003, 2 (06): : 469 - 478
[9] Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 μm
Rudno-Rudzinski, W
Ryczko, K
Sek, G
Misiewicz, J
da Silva, M
Quivy, AA
SOLID STATE COMMUNICATIONS, 2005, 135 (04) : 232 - 236
[10] Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure
Ding, Y.
Fan, W. J.
Ma, B. S.
Xu, D. W.
Yoon, S. F.
Liang, S.
Zhao, L. J.
Wasiak, M.
Czyszanowski, T.
Nakwaski, W.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)

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