Spin-dependent transport for a two-dimensional electron gas with magnetic barriers

被引：14
|
作者：
Wang Hai-Yan [1 ]
Duan Zi-Gang [2 ]
Liao Wen-Hu [1 ]
Zhou Guang-Hui [1 ]
机构：
[1] Hunan Normal Univ, Dept Phys, Changsha 410081, Hunan, Peoples R China
[2] Shenzhen Univ, Inst Optoelect, Shenzhen 518060, Peoples R China
来源：
CHINESE PHYSICS B | 2010年 / 19卷 / 03期
基金：
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词：
semiconductor; 2DEG; magnetic barriers; spin-dependent transport; SUPERLATTICES; POLARIZATION; RESISTANCE;
D O I：
10.1088/1674-1056/19/3/037301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The spin-dependent conductance and magnetoresistance ratio (MRR) for a semiconductor heterostructures consisting of two magnetic barriers with different height and space have been investigated by the transfer-matrix method. It is shown that the splitting of the conductance for parallel and antiparallel magnetization configurations results in tremendous spin-dependent MRR, and the maximal MRRs reach 5300% and 3800% for the magnetic barrier spaces W = 81.3 and 243.9 nm, respectively. The obtained spin-filtering transport property of nanostructures with magnetic barriers may be useful to magnetic-barrier-based spintronics.
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页数：5
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