Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

被引：40

作者：

Kandaswamy, P. K. ^{[1
]}

Machhadani, H. ^{[2
]}

Kotsar, Y. ^{[1
]}

Sakr, S. ^{[2
]}

Das, A. ^{[1
]}

Tchernycheva, M. ^{[2
]}

Rapenne, L. ^{[3
]}

Sarigiannidou, E. ^{[3
]}

Julien, F. H. ^{[2
]}

Monroy, E. ^{[1
]}

机构：

[1] CEA Grenoble, NPSC, SP2M, INAC,CNRS,Grp Nanophys & Semicond, F-38054 Grenoble 9, France

[2] Univ Paris 11, Photis Dept, Inst Elect Fondamentale, F-91405 Orsay, France

[3] Grenoble INP, LMGP, F-38016 Grenoble 1, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 14期

关键词：

aluminium compounds; doping profiles; elemental semiconductors; gallium compounds; III-V semiconductors; impurity absorption spectra; photoluminescence; semiconductor doping; semiconductor superlattices; silicon; spectral line broadening; spectral line shift; wide band gap semiconductors; QUANTUM-WELLS; GAN; PHOTOLUMINESCENCE; SPECTROSCOPY;

D O I：

10.1063/1.3379300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the effect of Si doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices. For increasing doping levels, interband luminescence displays a blueshift and a broadening of the band edge caused by the screening of the internal electric field and band-filling effects. The intersubband absorption energy is mainly governed by many-body effects like exchange interaction and depolarization shift, which increase the e(1)-e(2) subband separation. The ISB blueshift induced by many-body effects can be more than 50% of the e(1)-e(2) transition energy.

引用

页数：3

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