New Memory Method of Impedance Elements for Marching-on-in-Time Solution of Time-Domain Integral Equation

被引：3
|
作者：
Li, Jin-Yan [1 ]
Zhao, Yan-Wen [1 ]
Nie, Zai-Ping [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 610054, Peoples R China
来源：
ELECTROMAGNETICS | 2010年 / 30卷 / 05期
基金：
美国国家科学基金会;
关键词：
time-domain integral equation; marching-on-in-time; memory method; impedance element; parallel; ELECTROMAGNETIC SCATTERING; ARBITRARY SHAPE; ALGORITHM; SURFACES;
D O I：
10.1080/02726343.2010.483936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of an impedance matrix produced by the marching-on-in-time algorithm for solving time-domain integral equations are analyzed in this article. Two classic memory methods derived from the 2-D sparse matrix memory method are introduced to store time-domain impedance elements. A new memory method is proposed to ameliorate the primary two methods. The memory costs of the three memory methods are compared by numerical results. It is validated that the new method enhances memory efficiency without increasing the computation. The advantages of using the new memory method in marching-on-in-time parallel computing are also presented.
引用
收藏
页码：448 / 462
页数：15
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