The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct

被引:22
|
作者
Black, K. [1 ]
Jones, A. C. [1 ]
Alexandrou, I. [2 ]
Heys, P. N. [3 ]
Chalker, P. R. [4 ]
机构
[1] Univ Liverpool, Dept Chem, Liverpool L69 7ZD, Merseyside, England
[2] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England
[3] SAFC Hitech, Wirral CH62 3QF, Merseyside, England
[4] Univ Liverpool, Dept Mat Sci & Engn, Wirral L69 3GH, Merseyside, England
关键词
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; GROWTH; MOCVD; NANOSTRUCTURES; ARRAYS; LAYERS;
D O I
10.1088/0957-4484/21/4/045701
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The optical properties of zinc oxide nanowires are critically influenced by the growth process. Herein, we describe a metal-organic chemical vapour deposition (MOCVD) process for the growth of ZnO nanowires with improved optical properties. A tetrahydrofuran adduct is used to control the reactivity of dimethylzinc to enable this. Vertically aligned zinc oxide nanowires have been grown on Si(111) substrates by liquid injection MOCVD, using a solution of [Me2Zn( tetrahydrofuran)] in the presence of oxygen. The ZnO morphology becomes nanowire-like in a narrow temperature range centred about 500 degrees C. Above and below this temperature range, the ZnO is deposited in the form of polycrystalline films. The ZnO nanowires grow from a polycrystalline nucleation layer, with the (0002) c-axis parallel to the Si < 111 > substrate orientation. High-resolution electron microscopy reveals a highly crystalline nanowire microstructure. Resonance enhanced ultraviolet Raman spectroscopy shows that the ratio of first- and second-order longitudinal optic modes is commensurate with electron-phonon coupling effects observed previously in ZnO nanostructures. Photoluminescence exhibits intense near band-edge emission with a full width at half-maximum of 110 meV at room temperature and shows negligible defect-related visible emission.
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页数:5
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