dry lithography using liquid and supercritical carbon dioxide based chemistries and processes

被引:9
|
作者
Hoggan, EN
Wang, K
Flowers, D
DeSimone, JM
Carbonell, RG
机构
[1] N Carolina State Univ, Dept Chem Engn, Raleigh, NC 27695 USA
[2] Univ N Carolina, Dept Chem, Chapel Hill, NC 27599 USA
关键词
liquid and supercritical carbon dioxide; lithography; photoacid generator; photoresist; resist contrast; resist sensitivity;
D O I
10.1109/tsm.2004.837002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Novel carbon dioxide (CO2) soluble photoresists were synthesized based on random copolymers of 1,1-dihydroperfluorooctylmethacrylate and 2-tetrahyrdopyranyl methacrylate. These resins, along with specially designed CO2-soluble photoacid generators, were utilized to demonstrate the potential for a new "dry" lithographic process. Photoresist spin casting, development, and stripping were all carried out using only liquid and supercritical CO2 as the processing medium. A novel high-pressure spin coating process was used to deposit the photoresist films. Parameters such as resist sensitivity, contrast, and resolution were investigated. Wafers were imaged using both 248- and 193-nm radiation, demonstrating the potential of this new photoresist platform for use as a sustainable technology for the microelectronics industry.
引用
收藏
页码:510 / 516
页数:7
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