Lasing characteristics of MOVPE grown 1.5 μm GaInAsP LD using directly bonded InP/Si substrate

被引：0
|
作者：
Hayasaka, Natsuki [1 ]
Nishiyama, Tetsuo [1 ]
Onuki, Yuya [1 ]
Kamada, Naoki [1 ]
Han, Xu [1 ]
Periyanayagam, Gandhi Kallarasa [1 ]
Uchida, Kazuki [1 ]
Sugiyama, Hirokazu [1 ]
Hayasaka, Masaki [1 ]
Shimomura, Kazuhiko [1 ]
机构：
[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, 7-1 Kioicho, Tokyo 1028554, Japan
来源：
2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lasing characteristics dependent on the bonding temperature for 1.5p.m GaInAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 degrees C. The electrical and lasing characteristics dependent on the bonding temperature were compared.
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页码：76 / 76
页数：1
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