Low-temperature transport properties of InSb films on GaAS(100) substrates

被引：5
|
作者：
Ishida, S
Takeda, K [1 ]
Okamoto, A
Shibasaki, I
机构：
[1] Sci Univ Tokyo, Fac Sci & Engn, Yamaguchi 7560884, Japan
[2] Asahi Chem Ind Co Ltd, Fuji, Shizuoka 4168501, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 18卷 / 1-3期
关键词：
InSb film on GaAs; Shubnikov-de Haas oscillations; accumulation layer; weak anti-localization; spin-orbit interaction;
D O I：
10.1016/S1386-9477(02)01063-9
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Low-temperature magnetoresistance (MR) has been studied for undoped and Sn-doped InSb thin films grown on GaAs(1 0 0) substrates by MBE. Sn-doped films show the Shubnikov-de Haas oscillations which reflect a large g-factor (g*similar to-40 depending on the carrier concentration) of electrons in InSb films. In undoped films, on the other hand, almost whole carriers fall into the accumulation layer at the InSb/GaAs interface at low temperatures, resulting in the advent of positive MR arising from the two-dimensional weak anti-localization due to spin-orbit interaction. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：159 / 160
页数：2
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