Polaron effect on Optical Properties in Al0.3Ga0.7As/GaAs Single Quantum Well

The single quantum well fabricated using Al0.3Ga0.7As/GaAs heterostructures is dressed by the THz laser field. The QW is also under an electric field in order to make it asymmetric. The effective mass equation including the laser dressed confining potential, the laser dressed position-dependent effective mass and the applied electric field is solved using the Fourier series method. The envelope functions are perturbed by the electron-phonon interaction term. The electric dipole moments are calculated taking the electron envelope function modified by the electron-phonon interaction term in the first-order perturbation method. The scattering rate due to electron interaction with the longitudinal optic phonon is calculated in the Fermi golden rule. The calculated energy levels, dipole matrix elements and relaxation rates are used to calculate absorption coefficients in the well. The absorption coefficients are enhanced by the increased dipole matrix elements due to electron-phonon interaction.