Non-linear exciton spectroscopy of GaN/AlGaN quantum wells

被引：0
|
作者：
Cingolani, R [1 ]
Coli, G
Rinaldi, R
Calcagnile, L
Tang, H
Botchkarev, AE
Kim, W
Salvador, A
Morkoc, H
机构：
[1] Univ Lecce, Dipartimento Sci Mat, Ist Nazl Fis Mat, I-73100 Lecce, Italy
[2] Univ Illinois, Coordinated Sci Lab, Urbana, IL 61801 USA
[3] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
[4] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
excitons; non-linear spectroscopy; two-photon absorption; quantum wells;
D O I：
10.4028/www.scientific.net/MSF.264-268.1303
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the excitonic absorption of GaN/AlGaN quantum wells by means of one-and two-photon absorption spectroscopy. The free exciton-polariton absorption exhibits identical one-and two-photon selection rules consistent with the wurtzite symmetry. The two-photon absorption spectroscopy is found to be much less sensitive to the statistical disorder of the lattice, thus providing well resolved excitonic resonances even in samples with structural imperfections.
引用
收藏
页码：1303 / 1306
页数：4
相关论文
共 50 条
  • [1] Exciton oscillator strength in GaN/AlGaN quantum wells
    Zamfirescu, M
    Gil, B
    Grandjean, N
    Malpuech, G
    Kavokin, A
    Bigenwald, P
    Massies, J
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2002, 190 (01): : 129 - 133
  • [2] The effects of linear and non-linear diffusion on exciton energies in quantum wells
    Harrison, P
    Hagston, WE
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8451 - 8455
  • [3] Exciton Binding Energies in Zincblende GaN/AlGaN Quantum Wells
    [J]. Park, S.-H. (shpark@cu.ac.kr), 1600, Japan Society of Applied Physics (43):
  • [4] Exciton binding energies in zincblende GaN/AlGaN quantum wells
    Park, SH
    Ahn, D
    Lee, YT
    Chuang, SL
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (01): : 140 - 143
  • [5] Exciton confinement in GaN/AlGaN quantum wells enhanced by non-abrupt interfaces
    Caetano, EWS
    Freire, VN
    Farias, GA
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 234 (03): : 730 - 733
  • [6] Exciton Effects in Low-Barrier GaN/AlGaN Quantum Wells
    Creti, Arianna
    Tobaldi, David M.
    Lomascolo, Mauro
    Tarantini, Iolena
    Esposito, Marco
    Passaseo, Adriana
    Tasco, Vittorianna
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2022, 126 (34): : 14727 - 14734
  • [7] Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells
    Smith, M
    Lin, JY
    Jiang, HX
    Khan, A
    Chen, Q
    Salvador, A
    Botchkarev, A
    Kim, W
    Morkoc, H
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2882 - 2884
  • [8] Microcalorimetric absorption spectroscopy in GaN-AlGaN quantum wells
    Göldner, A
    Hoffmann, A
    Gil, B
    Lefebvre, P
    Bigenwald, P
    Christol, P
    Morkoç, H
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 319 - 322
  • [9] Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells
    Gallart, M
    Morel, A
    Taliercio, T
    Lefebvre, P
    Gil, B
    Allègre, J
    Mathieu, H
    Grandjean, N
    Leroux, M
    Massies, J
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 180 (01): : 127 - 132
  • [10] Theoretical analysis of optical gain and exciton effect in GaN/AlGaN quantum wells
    Uenoyama, T
    Suzuki, M
    [J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V, 1997, 2994 : 94 - 101
12345