Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

被引:38
|
作者
Cai, Wenlong [1 ]
Shi, Kewen [1 ]
Zhuo, Yudong [1 ]
Zhu, Daoqian [1 ]
Huang, Yan [1 ]
Yin, Jialiang [1 ]
Cao, Kaihua [1 ]
Wang, Zhaohao [1 ]
Guo, Zongxia [1 ]
Wang, Zilu [1 ]
Wang, Gefei [2 ]
Zhao, Weisheng [1 ]
机构
[1] Beihang Univ, Sch Integrated Circuit Sci & Engn, Fert Beijing Inst, MIIT Key Lab Spintron, Beijing 100191, Peoples R China
[2] Truth Memory Technol Corp, Beijing 100191, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Switches; Magnetization; Timing; Torque; Magnetic tunneling; Magnetic field measurement; Magnetic switching; Sub-nanosecond field-free switching; perpendicular magnetic tunnel junctions; spin-transfer torque; spin-orbit torque; timing schemes;
D O I
10.1109/LED.2021.3069391
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The interplay of spin-transfer torque (STT) and spin-orbit torque (SOT) highlights the potential of current-induced magnetization reversal for the ultrahigh-speed and ultralow-power memory applications. However, the ultrafast field-free switching and its dynamic mechanism have not been clarified yet. Here, we experimentally demonstrate the sub-nanosecond field-free switching by the interplay of STT and SOT in perpendicular magnetic tunnel junctions (MTJs). The dynamic investigations of the STT and SOT switching reveal that the applied SOT current can highly decrease the incubation time and current density of STT, which leads to the achievement of ultra-fast switching. Besides, the timing scheme investigations of SOT and STT pulses are performed. The firstly applied SOT current further decreases the transition time of the magnetization switching, which could result from the different nucleation and motions of domains. The interplay and the timing operations of STT and SOT provide more flexible solutions for high-speed, large-scalability and energy efficient memory applications.
引用
收藏
页码:704 / 707
页数:4
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