Tin Halide Perovskites: Progress and Challenges

被引:170
|
作者
Yang, Wen-Fan [1 ]
Igbari, Femi [1 ]
Lou, Yan-Hui [2 ,3 ]
Wang, Zhao-Kui [1 ]
Liao, Liang-Sheng [1 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
[2] Soochow Univ, Soochow Inst Energy & Mat Innovat, Sch Energy, Suzhou 215006, Peoples R China
[3] Soochow Univ, Key Lab Adv Carbon Mat & Wearable Energy Technol, Suzhou 215006, Peoples R China
关键词
stability; tin halide perovskites; toxicity; HOLE-TRANSPORTING MATERIAL; OPEN-CIRCUIT VOLTAGE; LEAD-FREE; SOLAR-CELLS; OPTICAL-PROPERTIES; THIN-FILMS; BAND-GAP; HIGH-PERFORMANCE; CHARGE SEPARATION; CSSNI3; PEROVSKITE;
D O I
10.1002/aenm.201902584
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The chemical composition engineering of lead halide perovskites via a partial or complete replacement of toxic Pb with tin has been widely reported as a feasible process due to the suitable ionic radius of Sn and its possibility of existing in the +2 state. Interestingly, a complete replacement narrows the bandgap while a partial replacement gives an anomalous phenomenon involving a further narrowing of bandgap relative to the pure Pb and Sn halide perovskite compounds. Unfortunately, the merits of this anomalous behavior have not been properly harnessed. Although promising progress has been made to advance the properties and performance of Sn-based perovskite systems, their photovoltaic (PV) parameters are still significantly inferior to those of the Pb-based analogs. This review summarizes the current progress and challenges in the preparation, morphological and photophysical properties of Sn-based halide perovskites, and how these affect their PV performance. Although it can be argued that the Pb halide perovskite systems may remain the most sought after technology in the field of thin film perovskite PV, prospective research directions are suggested to advance the properties of Sn halide perovskite materials for improved device performance.
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页数:30
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