Theory of electron spin relaxation in n-doped quantum wells

被引：12
|
作者：
Harmon, N. J. [1 ]
Putikka, W. O. [1 ]
Joynt, R. [2 ]
机构：
[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
[2] Univ Wisconsin, Dept Phys, Madison, WI 53705 USA
来源：
PHYSICAL REVIEW B | 2010年 / 81卷 / 08期
基金：
美国国家科学基金会;
关键词：
WEAK FERROMAGNETISM; SEMICONDUCTORS; DYNAMICS; EXCITONS; GAAS; DOTS;
D O I：
10.1103/PhysRevB.81.085320
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spin exchange between all spin species. By doing so we explain quantitatively and qualitatively the striking and unusual temperature dependence in (110)-GaAs quantum wells. We discuss possible future experiments to resolve the pertinent localized spin-relaxation mechanisms. In addition, our analysis allows us to propose possible experimental scenarios that will optimize spin-relaxation times in GaAs and CdTe quantum wells.
引用
收藏
页数：8
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