X-ray diffraction investigation of n-type porous silicon

被引：8

作者：

Chamard, V ^{[1
]}

Dolino, G ^{[1
]}

机构：

[1] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38402 St Martin Dheres, France

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.1326857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High resolution x-ray diffraction has been used to study the effect of doping level and illumination on the formation of n-type porous silicon. For highly doped n(+)-type porous layers prepared in darkness, an unusual increase of the lattice mismatch with the formation time is observed. When the samples are prepared under illumination, a degradation of the crystal quality, increasing with a decrease of the material doping level, is observed. The possible origins of these effects are discussed. (C) 2001 American Institute of Physics.

引用

页码：174 / 180

页数：7

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