Hydrocarbon detection via ion implantation in metal-insulator-semiconductor devices

被引:1
|
作者
Medlin, JW [1 ]
Bastasz, R [1 ]
McDaniel, AH [1 ]
机构
[1] Sandia Natl Labs, Livermore, CA 94550 USA
基金
美国能源部;
关键词
D O I
10.1063/1.1829138
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method for using metal-insulator-semiconductor (MIS) sensors to detect hydrocarbons is described. In this method, hydrocarbon gases are ionized and focused in an energetic beam onto the surface of a MIS device using an ion gun. This detection scheme is found to be selective to hydrogen-containing compounds, with other species yielding no detectable response. The magnitude of the sensor response is found to be a strong function of the current flux and beam energy. These results suggest that ion implantation in MIS devices may be a useful sensing strategy for detection of various combustible gases. (C) 2004 American Institute of Physics.
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页码:5457 / 5459
页数:3
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