On the photoconductivity of Bi2O3 in thin films

被引：0
|
作者：
Leontie, L
Caraman, M
Rusu, GI
机构：
[1] Al I Cuza Univ, Fac Phys, R-6600 Iasi, Romania
[2] State Univ Moldavia, Fac Phys, MD-2009 Chisinau, Moldova
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2000年 / 2卷 / 04期
关键词：
photoconductivity; oxidic semiconductors; thin films;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The spectral characteristics of photoconductivity for Bi2O3 thin films were investigated. The films were prepared by thermal oxidation in air of Bi evaporated films. As revealed by X-ray diffraction and polarizing microscopy studies, polycrystalline and multiphasic films were obtained. From the photoconductivity spectral curves, the bandgap energy values were determined, by using the Moss criterion. The influence of oxidation (preparation) conditions on the E-g values is discussed. The photoconductivity of Al-Bi2O3-Al, Cu-Bi2O3-Cu and Al-Bi2O3-In2O3 structures is also investigated.
引用
收藏
页码：385 / 389
页数：5
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