Modeling and simulation of tunneling current in MOS devices including quantum mechanical effects

被引：0

作者：

Ghetti, A ^{[1
]}

Bude, J ^{[1
]}

Silverman, P ^{[1
]}

Hamad, A ^{[1
]}

Vaidya, H ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2000年 / E83C卷 / 08期

关键词：

modeling and simulation; quantum mechanical effects; tunneling current; ultra-thin oxides;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report on the modeling and simulation of tunneling current in MOS devices including quantum mechanical effects. The simulation model features an original scheme for the self consistent solution of Poisson and Schrodinger equations and it is used for the extraction of the oxide thickness, by fitting CV curves, and the calculation of the tunneling current. Simulations and experiments are compared for different device types and oxide thicknesses (1.5-6.5 nm) showing goad agreement and pointing out the importance of quantum mechanical modeling and the presence of many tunneling mechanisms in ultra-thin oxide MOS devices.

引用

页码：1175 / 1182

页数：8

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