Two-dimensional inorganic molecular crystals

被引:114
|
作者
Han, Wei [1 ]
Huang, Pu [2 ]
Li, Liang [1 ]
Wang, Fakun [1 ]
Luo, Peng [1 ]
Liu, Kailang [1 ]
Zhou, Xing [1 ]
Li, Huiqiao [1 ,3 ]
Zhang, Xiuwen [2 ]
Cui, Yi [3 ]
Zhai, Tianyou [1 ]
机构
[1] Huazhong Univ Sci & Technol HUST, State Key Lab Mat Proc & Die & Mould Technol, Sch Mat Sci & Engn, Wuhan 430074, Hubei, Peoples R China
[2] Shenzhen Univ, Shenzhen Key Lab Flexible Memory Mat & Devices, Coll Elect Sci & Technol, Nanhai Ave 3688, Shenzhen 518060, Guangdong, Peoples R China
[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
ANTIMONY TRIOXIDE; PHASE-TRANSITION; HETEROSTRUCTURES; DIODES; DRIVEN; GROWTH; EDGE;
D O I
10.1038/s41467-019-12569-9
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Two-dimensional molecular crystals, consisting of zero-dimensional molecules, are very appealing due to their novel physical properties. However, they are mostly limited to organic molecules. The synthesis of inorganic version of two-dimensional molecular crystals is still a challenge due to the difficulties in controlling the crystal phase and growth plane. Here, we design a passivator-assisted vapor deposition method for the growth of two-dimensional Sb2O3 inorganic molecular crystals as thin as monolayer. The passivator can prevent the heterophase nucleation and suppress the growth of low-energy planes, and enable the molecule-by-molecule lateral growth along high-energy planes. Using Raman spectroscopy and in situ transmission electron microscopy, we show that the insulating alpha-phase of Sb2O3 flakes can be transformed into semiconducting beta-phase under heat and electron-beam irradiation. Our findings can be extended to the controlled growth of other two-dimensional inorganic molecular crystals and open up opportunities for potential molecular electronic devices.
引用
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页数:10
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