Structural and Optical Properties of Tin Selenide Thin films Prepared by Chemical Bath Deposition Method

被引：5
|
作者：
Solanki, V. R. [1 ,2 ]
Parmar, R. J. [3 ]
Pathak, R. J. [1 ,2 ]
Parmar, M. D. [4 ]
机构：
[1] RR Mehta Coll Sci, Palanpur, Gujarat, India
[2] CL Parikh Coll Commerce, Palanpur, Gujarat, India
[3] Sheth MN Sci Coll, Dept Phys, Patan, Gujarat, India
[4] MN Sci Coll, Dept Phys, Visnagar, Gujarat, India
来源：
FUNCTIONAL OXIDES AND NANOMATERIALS | 2017年 / 1837卷
关键词：
SNSE; ELECTRODEPOSITION;
D O I：
10.1063/1.4982103
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Tin selenide (SnSe) is an important IV-VI semiconductor used for various devices like memory switching, photoelectrical cells, holographic recording systems. Chemical bath deposition technique has been used to synthesize tin selenide (SnSe) thin films. The SnSe thin films are deposited on glass substrates in an aqueous alkaline medium using sodium selenosulphate as Se-2 ion source and Tin Chloride as Sn+2 ion source. The SnSe Thin films were characterized to study the structural properties. XRD study confirms the formation of orthorhombic structural. The Prepared samples were investigated for optical characterization by UV-VIS Spectroscopy. The optical band gap was found to be direct, that is equal to 1.73eV.
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页数：3
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