MOCVD-grown Al0.07Ga0.93As high-power laser diode array

被引：0
|
作者：
Son, NJ
Park, S
Ahn, JC
Kwon, OD
机构：
来源：
COMPOUND SEMICONDUCTORS 1995 | 1996年 / 145卷
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A laser diode array structure consisting of a 150 Angstrom Al0.07Ga0.93As single quantum well active region operating near 810 nm, cladded with an AlGaAs graded-index sep arate confinement heterostructure, has been grown by MOCVD. 3.1 W output power has been obtained from the 500 mu m aperture, uncoated laser diode array with 460 mu m cavity length. The internal quantum efficiency was found to be 75.8% and the internal loss 4.83 cm(-1).
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页码：999 / 1002
页数：4
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