Structural properties of a-Si1-xNx:H films grown by plasma enhanced chemical vapour deposition by SiH4+NH3+H2 gas mixtures

被引：60

作者：

Giorgis, F

Pirri, CF

Tresso, E

机构：

[1] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy

[2] Politecn Torino, Ist Nazl Fis Mat, I-10129 Turin, Italy

来源：

THIN SOLID FILMS | 1997年 / 307卷 / 1-2期

关键词：

amorphous materials; semiconductors; silicon nitride; structural properties;

D O I：

10.1016/S0040-6090(97)00272-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous silicon-nitrogen, (a-Si,(1-x)N(x),:H) alloys with x in the range 0.01-0.57 have been deposited in a dedicated chamber by ultra high vacuum plasma enhanced chemical vapour deposition (PECVD) in SiH(4),+NH(3), gas mixtures with different molecule dwell time and by hydrogen diluting the plasma. By optical spectroscopy, Rutherford backscattering spectrometry (RES), elastic recoil detection analysis (ERDA) and infrared spectroscopy (IR) a complete picture of bonding distribution and structural properties of device-quality a-Si,(1-x),N(x):H films as a function of deposition conditions has been drawn.;Annealing experiments under vacuum up to 500 degrees C have shown that in all the compositional range the films are thermally stable up to 400 degrees C, for higher temperature bonded hydrogen effuses from both silicon and nitrogen atoms with behaviours dependent on nitrogen content in the film. (C) 1997 Elsevier Science S.A.

引用

页码：298 / 305

页数：8

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