Selective oxidation of HipCo single-wall carbon nanotubes

被引：1
|
作者：
Bokova, SN [1 ]
Obraztsova, ED [1 ]
Osadchy, AV [1 ]
Kuzmany, H [1 ]
Dettlaff-Weglikowska, U [1 ]
Roth, S [1 ]
机构：
[1] RAS, AM Prokhorov Gen Phys Inst, Ctr Nat Sci, Moscow 119991, Russia
来源：
NANOENGINEERED NANOFIBROUS MATERIALS | 2004年 / 169卷
关键词：
D O I：
10.1007/978-1-4020-2550-1_2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure of HipCO single-wall carbon nanotubes was controlled by Raman scattering during the material heating in three ways: in a laser beam ("in situ'), in an optical oven ("in situ') and after a preliminary heating in the oven followed by Raman measurements. All experiments have demonstrated a diameter-selective oxidative etching of the smallest nanotubes (8 - 10 Angstrom) at temperatures 400 - 450 degreesC.
引用
收藏
页码：131 / 136
页数：6
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