Hot-electron noise in InAlAs/InGaAs/InAlAs quantum wells

被引：0

作者：

Aninkevicius, V ^{[1
]}

Liberis, J ^{[1
]}

Matulioniene, I ^{[1
]}

Matulionis, A ^{[1
]}

Sakalas, P ^{[1
]}

Henle, B ^{[1
]}

Kohn, E ^{[1
]}

Berntgen, J ^{[1
]}

机构：

[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania

来源：

NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE | 1997年

关键词：

D O I：

暂无

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

We report on hot-electron microwave-noise measurements for InP-lattice matched InAlAs/InGaAs structures with two-dimensional electron gas (2DEG) subjected to high electric field applied parallel to the heterointerfaces. The excess noise specific to heavily-doped structures is resolved at 300 K and 80 K lattice temperatures. Location and origin of the excess noise is investigated.

引用

页码：71 / 74

页数：4

共 50 条

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