AlN piezoelectric thin films for energy harvesting and acoustic devices

被引：164
|
作者：
Fei, Chunlong [1 ]
Liu, Xiangli [2 ]
Zhu, Benpeng [2 ,6 ]
Li, Di [1 ]
Yang, Xiaofei [2 ]
Yang, Yintang [1 ]
Zhou, Qifa [3 ,4 ,5 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China
[3] Univ Southern Calif, Roski Eye Inst, Los Angeles, CA 90089 USA
[4] Univ Southern Calif, Dept Biomed Engn, Los Angeles, CA 90089 USA
[5] Univ Southern Calif, NIH Transducer Resource Ctr, Los Angeles, CA 90089 USA
[6] Huazhong Univ Sci & Technol, Minist Educ, Engn Res Ctr Funct Ceram, Wuhan 430074, Hubei, Peoples R China
来源：
NANO ENERGY | 2018年 / 51卷
关键词：
Aluminum nitride; Micro-electromechanical systems; Energy harvesting; Acoustic device; POLYCRYSTALLINE ALUMINUM NITRIDE; VIBRATION ENERGY; ELECTROMAGNETIC GENERATOR; PREFERRED ORIENTATION; GALLIUM NITRIDE; SAW DEVICES; FABRICATION; RESONATORS; SURFACE; GROWTH;
D O I：
10.1016/j.nanoen.2018.06.062
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Aluminum nitride (AlN) thin films are widely investigated due to their unique physical properties and applications in energy harvesting devices, ultrasonic transducers, microelectronics, high-frequency wide band communications, and power semiconductor devices. This article reviews recent studies of AlN structures, focusing on their fabrication and novel applications. Various fabrication techniques used to synthesize AlN films are discussed, along with their growth mechanisms and crystal structure. The physical properties of AlN films are summarized, including their mechanical and electrical properties (in particular the piezoelectric behavior). Finally, the application of AlN thin films in the fields of energy harvesting and acoustic devices is discussed in detail. Furthermore, this review proposes perspectives for future development of AlN thin films.
引用
收藏
页码：146 / 161
页数：16
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