<bold>MBE fabrication of MnxP nanowhiskers</bold>

被引：0
|
作者：
Bouravleuv, A. D. [1 ,4 ]
Sosiati, H. [2 ]
Ishibashi, T. [1 ]
Kuwano, N. [3 ]
Sato, K. [1 ]
机构：
[1] Tokyo Univ Agr & Technol, Grad Sch Engn, Koganei, Tokyo 1848588, Japan
[2] Kyushu Univ, Res Lab High Voltage Elect Micriscopy, Fukuoka 812, Japan
[3] Kyushu Univ, Art Sci Technol Ctr Corp Res, Fukuoka 812, Japan
[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2008年 / 100卷
关键词：
D O I：
10.1088/1742-6596/100/5/052052
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
MnP and Mn2P nanowhiskers have been grown by molecular-beam epitaxy (MBE) technique on InP(100) and GaAs(111) B substrates. The catalyst-free growth of nanowhiskers is found to be depended on the formation of Mn-based nanoclusters. The magnetic properties of the samples have been investigated by the measurements in a vibrating sample magnetometer.
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页数：4
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