New features of electrically detected magnetic resonance in silicon p-n diodes

被引：1
|
作者：
Hornmark, ET
Lyon, SA
Poindexter, EH [1 ]
Young, CF
机构：
[1] USA, Res Lab, Adelphi, MD 20783 USA
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
SOLID STATE COMMUNICATIONS | 2000年 / 116卷 / 05期
关键词：
point defects; impurities in semiconductors; electron paramagnetic resonance;
D O I：
10.1016/S0038-1098(00)00317-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electrically detected magnetic resonance (EDMR), due to spin-dependent recombination (SDR), in commercial silicon p-n diodes is re-examined. New features were noted in our samples. The main signal, formerly seen as a single line and attributed to Pt dopant, occurred as three similar lines with g(//) = 2.028, 2.046, 2.073, and g(perpendicular to) = 1.969. EDMR centers aligned in only one direction were seen: with g(//) along the diode axis, which is also a Si[111] bond direction. This restricted directionality may be seen in previous studies, but has passed unremarked. Though no favored explanations can be offered, these new complexities strongly suggest that extant theories of EDMR are incomplete. (C) 2000 Published by Elsevier Science Ltd.
引用
收藏
页码：279 / 282
页数：4
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